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Noboru Ohtani is Professor at the School of Science and Technology and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan. He earned his PhD degree in 1993 from Imperial College London, UK. Prior to joining Kwansei Gakuin University, he worked at the Advanced Technology Research Laboratories of the Nippon Steel Corporation.
Roland Rupp is Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications. He obtained his Diploma from the University of Erlangen-Nuremberg, and subsequently worked as Research Engineer at Stettner&Co. He then returned to university to obtain his PhD and afterwards worked as Development Engineer at Siemens AG for seven years before taking on his current position.
PART I. SILICON CARBIDE (SiC)
Bulk Growth of hex-SiC
Industrial Perspectives on hex-SiC Bulk Growth
CVD Epitaxy of hex-SiC
Industrial Perspective on CVD Epitaxy of hex-SiC
Bulk and Epitaxial Growth of c-SiC
Intrinsic Defects in SiC
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy
Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC
MOS Gate Oxide Interface Defects in SiC
SiC-Graphene Interfaces
Device Processing Using c-SiC and hex-SiC
Unipolar SiC Devices
Bipolar SiC Devices
Reliability of SiC Devices
Industrial Systems Using SiC Circuits
Hybrid Electric Vehicles and Electric Vehicles Applications of SiC
Novel Applications of SiC in Quantum Information
PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3
Ammonothermal and HVPE Bulk Growth of GaN
GaN on Si
HPSG and CVD Growth of Diamond
Diamond Epitaxy and Device Processing
Epitaxial Growth of Beta-Ga2O3
| Erscheinungsjahr: | 2021 |
|---|---|
| Fachbereich: | Populäre Darstellungen |
| Genre: | Chemie |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Buch |
| Seiten: | 736 |
| Inhalt: | 2 Bücher |
| ISBN-13: | 9783527346714 |
| ISBN-10: | 3527346716 |
| Sprache: | Englisch |
| Herstellernummer: | 1134671 000 |
| Einband: | Gebunden |
| Autor: |
Wellmann, Peter
Ohtani, Noboru Rupp, Roland |
| Redaktion: |
Wellmann, Peter
Ohtani, Noboru Rupp, Roland |
| Herausgeber: | Peter Wellmann/Noboru Ohtani/Roland Rupp |
| Hersteller: |
Wiley-VCH
Wiley-VCH GmbH |
| Abbildungen: | 150 schwarz-weiße und 100 farbige Abbildungen |
| Maße: | 257 x 179 x 47 mm |
| Von/Mit: | Peter Wellmann (u. a.) |
| Erscheinungsdatum: | 20.10.2021 |
| Gewicht: | 1,749 kg |
Noboru Ohtani is Professor at the School of Science and Technology and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan. He earned his PhD degree in 1993 from Imperial College London, UK. Prior to joining Kwansei Gakuin University, he worked at the Advanced Technology Research Laboratories of the Nippon Steel Corporation.
Roland Rupp is Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications. He obtained his Diploma from the University of Erlangen-Nuremberg, and subsequently worked as Research Engineer at Stettner&Co. He then returned to university to obtain his PhD and afterwards worked as Development Engineer at Siemens AG for seven years before taking on his current position.
PART I. SILICON CARBIDE (SiC)
Bulk Growth of hex-SiC
Industrial Perspectives on hex-SiC Bulk Growth
CVD Epitaxy of hex-SiC
Industrial Perspective on CVD Epitaxy of hex-SiC
Bulk and Epitaxial Growth of c-SiC
Intrinsic Defects in SiC
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy
Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC
MOS Gate Oxide Interface Defects in SiC
SiC-Graphene Interfaces
Device Processing Using c-SiC and hex-SiC
Unipolar SiC Devices
Bipolar SiC Devices
Reliability of SiC Devices
Industrial Systems Using SiC Circuits
Hybrid Electric Vehicles and Electric Vehicles Applications of SiC
Novel Applications of SiC in Quantum Information
PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3
Ammonothermal and HVPE Bulk Growth of GaN
GaN on Si
HPSG and CVD Growth of Diamond
Diamond Epitaxy and Device Processing
Epitaxial Growth of Beta-Ga2O3
| Erscheinungsjahr: | 2021 |
|---|---|
| Fachbereich: | Populäre Darstellungen |
| Genre: | Chemie |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Buch |
| Seiten: | 736 |
| Inhalt: | 2 Bücher |
| ISBN-13: | 9783527346714 |
| ISBN-10: | 3527346716 |
| Sprache: | Englisch |
| Herstellernummer: | 1134671 000 |
| Einband: | Gebunden |
| Autor: |
Wellmann, Peter
Ohtani, Noboru Rupp, Roland |
| Redaktion: |
Wellmann, Peter
Ohtani, Noboru Rupp, Roland |
| Herausgeber: | Peter Wellmann/Noboru Ohtani/Roland Rupp |
| Hersteller: |
Wiley-VCH
Wiley-VCH GmbH |
| Abbildungen: | 150 schwarz-weiße und 100 farbige Abbildungen |
| Maße: | 257 x 179 x 47 mm |
| Von/Mit: | Peter Wellmann (u. a.) |
| Erscheinungsdatum: | 20.10.2021 |
| Gewicht: | 1,749 kg |
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