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Cover: 9780081023068 | Wide Bandgap Semiconductor Power Devices | B. Jayant Baliga | Buch
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Wide Bandgap Semiconductor Power Devices
Materials, Physics, Design, and Applications
Taschenbuch von B. Jayant Baliga
Sprache: Englisch

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Beschreibung
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.
Inhaltsverzeichnis
1. Introduction
2. SiC Material Properties
3. GaN Material Properties
4. SiC Power Device Design and Fabrication
5. GaN-on-Si Power Device Design and Fabrication
6. GaN-on-GaN Power Device Design and Fabrication
7. Gate Drives for WBG devices
8. Packaging WBG devices
9. Applications of GaN devices
10. Applications of SiC devices
11. Synopsys
Details
Erscheinungsjahr: 2018
Genre: Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: Kartoniert / Broschiert
ISBN-13: 9780081023068
ISBN-10: 0081023065
Sprache: Englisch
Herstellernummer: C2016-0-04021-4
Redaktion: Baliga, B. Jayant
Hersteller: Woodhead Publishing
Elsevier Science & Technology
Verantwortliche Person für die EU: Zeitfracht Medien GmbH, Ferdinand-Jühlke-Str. 7, D-99095 Erfurt, produktsicherheit@zeitfracht.de
Maße: 19 x 152 x 229 mm
Von/Mit: B. Jayant Baliga
Erscheinungsdatum: 26.10.2018
Gewicht: 0,68 kg
Artikel-ID: 126704456
Inhaltsverzeichnis
1. Introduction
2. SiC Material Properties
3. GaN Material Properties
4. SiC Power Device Design and Fabrication
5. GaN-on-Si Power Device Design and Fabrication
6. GaN-on-GaN Power Device Design and Fabrication
7. Gate Drives for WBG devices
8. Packaging WBG devices
9. Applications of GaN devices
10. Applications of SiC devices
11. Synopsys
Details
Erscheinungsjahr: 2018
Genre: Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: Kartoniert / Broschiert
ISBN-13: 9780081023068
ISBN-10: 0081023065
Sprache: Englisch
Herstellernummer: C2016-0-04021-4
Redaktion: Baliga, B. Jayant
Hersteller: Woodhead Publishing
Elsevier Science & Technology
Verantwortliche Person für die EU: Zeitfracht Medien GmbH, Ferdinand-Jühlke-Str. 7, D-99095 Erfurt, produktsicherheit@zeitfracht.de
Maße: 19 x 152 x 229 mm
Von/Mit: B. Jayant Baliga
Erscheinungsdatum: 26.10.2018
Gewicht: 0,68 kg
Artikel-ID: 126704456
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