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Microwave Circuit Design Using Linear and Nonlinear Techniques
Buch von George D Vendelin (u. a.)
Sprache: Englisch

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Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology

The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material.

The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like:
* An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions
* A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements
* Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET
* Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain

Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology

The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material.

The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like:
* An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions
* A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements
* Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET
* Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain

Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
Über den Autor

George D. Vendelin is Adjunct Professor at Stanford, Santa Clara, and San Jose State Universities, as well as UC-Berkeley-Extension. He is a Fellow of the IEEE and has over 40 years of microwave engineering design and teaching experience.

Anthony M. Pavio, PhD, is Manager of the Phoenix Design Center for Rockwell Collins. He is a Fellow of the IEEE and was previously Manager at the Integrated RF Ceramics Center for Motorola Labs.

Ulrich L. Rohde is a Professor of Technical Informatics, University of the Joint Armed Forces, in Munich, Germany; a member of the staff of other universities world-wide; partner of Rohde & Schwarz, Munich; and Chairman of the Board of Synergy Microwave Corporation. He is the author of two editions of Microwave and Wireless Synthesizers: Theory and Design.

Dr.-Ing. Matthias Rudolph is Ulrich L. Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology in Cottbus, Germany and heads the low-noise components lab at the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik in Berlin.

Inhaltsverzeichnis
Foreword xvii

Preface To The Third Edition xix

1 RF/Microwave Systems 1

1.1 Introduction 1

1.2 Maxwell's Equations 11

1.3 Frequency Bands, Modes, and Waveforms of Operation 13

1.4 Analog and Digital Signals 15

1.5 Elementary Functions 26

1.6 Basic RF Transmitters and Receivers 32

1.7 RF Wireless/Microwave/Millimeter Wave Applications 34

1.8 Modern CAD for Nonlinear Circuit Analysis 37

1.9 Dynamic Load Line 38

References 39

Bibliography 40

Problems 41

2 Lumped and Distributed Elements 43

2.1 Introduction 43

2.2 Transition from RF to Microwave Circuits 43

2.3 Parasitic Effects on Lumped Elements 46

2.4 Distributed Elements 53

2.5 Hybrid Element: Helical Coil 54

References 55

Bibliography 57

Problems 57

3 Active Devices 59

3.1 Introduction 59

3.2 Diodes 60

3.2.1 Large-Signal Diode Model 61

3.2.2 Mixer and Detector Diodes 65

3.2.3 Parameter Trade-Offs 70

3.2.4 Mixer Diodes 72

3.2.5 PIN Diodes 73

3.2.6 Tuning Diodes 84

3.2.7 Q Factor or Diode Loss 94

3.2.8 Diode Problems 99

3.2.9 Diode-Tuned Resonant Circuits 105

3.3 Microwave Transistors 110

3.3.1 Transistor Classification 110

3.3.2 Bipolar Transistor Basics 113

3.3.3 GaAs and InP Heterojunction Bipolar Transistors 127

3.3.4 SiGe HBTs 141

3.3.5 Field-Effect Transistor Basics 147

3.3.6 GaN, GaAs, and InP HEMTs 158

3.3.7 MOSFETs 165

3.3.8 Packaged Transistors 182

3.4 Example: Selecting Transistor and Bias for Low-Noise Amplification 186

3.5 Example: Selecting Transistor and Bias for Oscillator Design 191

3.6 Example: Selecting Transistor and Bias for Power Amplification 194

3.6.1 Biasing HEMTs 196

3.6.2 Biasing HBTs 198

References 200

Bibliography 203

Problems 204

4 Two-Port Networks 205

4.1 Introduction 205

4.2 Two-Port Parameters 206

4.3 S Parameters 216

4.4 S Parameters from SPICE Analysis 216

4.5 Mason Graphs 217

4.6 Stability 221

4.7 Power Gains, Voltage Gain, and Current Gain 223

4.7.1 Power Gain 223

4.7.2 Voltage Gain and Current Gain 229

4.7.3 Current Gain 230

4.8 Three-Ports 231

4.9 Derivation of Transducer Power Gain 234

4.10 Differential S Parameters 236

4.10.1 Measurements 239

4.10.2 Example 239

4.11 Twisted-Wire Pair Lines 240

4.12 Low-Noise and High-Power Amplifier Design 242

4.13 Low-Noise Amplifier Design Examples 245

References 254

Bibliography 255

Problems 255

5 Impedance Matching 261

5.1 Introduction 261

5.2 Smith Charts and Matching 261

5.3 Impedance Matching Networks 269

5.4 Single-Element Matching 269

5.5 Two-Element Matching 271

5.6 Matching Networks Using Lumped Elements 272

5.7 Matching Networks Using Distributed Elements 273

5.7.1 Twisted-Wire Pair Transformers 273

5.7.2 Transmission Line Transformers 274

5.7.3 Tapered Transmission Lines 276

5.8 Bandwidth Constraints for Matching Networks 277

References 287

BIBLIOGRAPHY 288

PROBLEMS 288

6 Microwave Filters 294

6.1 Introduction 294

6.2 Low-Pass Prototype Filter Design 295

6.2.1 Butterworth Response 295

6.2.2 Chebyshev Response 297

6.3 Transformations 302

6.3.1 Low-Pass Filters: Frequency and Impedance Scaling 302

6.3.2 High-Pass Filters 302

6.3.3 Bandpass Filters 304

6.3.4 Narrow-Band Bandpass Filters 306

6.3.5 Band-Stop Filters 309

6.4 Transmission Line Filters 312

6.4.1 Semilumped Low-Pass Filters 315

6.4.2 Richards Transformation 318

6.5 Exact Designs and CAD Tools 325

6.6 Real-Life Filters 326

6.6.1 Lumped Elements 326

6.6.2 Transmission Line Elements 327

6.6.3 Cavity Resonators 327

6.6.4 Coaxial Dielectric Resonators 327

6.6.5 Thin-Film Bulk-Wave Acoustic Resonator (FBAR) 327

References 330

Bibliography 330

Problems 330

7 Noise In Linear and Nonlinear Two-Ports 332

7.1 Introduction 332

7.2 Signal-to-Noise Ratio 334

7.3 Noise Figure Measurements 336

7.4 Noise Parameters and Noise Correlation Matrix 338

7.4.1 Correlation Matrix 338

7.4.2 Method of Combining Two-Port Matrix 339

7.4.3 Noise Transformation Using the [ABCD] Noise Correlation Matrices 339

7.4.4 Relation Between the Noise Parameter and [CA] 340

7.4.5 Representation of the ABCD Correlation Matrix in Terms of Noise Parameters [7.4] 342

7.4.6 Noise Correlation Matrix Transformations 342

7.4.7 Matrix Definitions of Series and Shunt Element 343

7.4.8 Transferring All Noise Sources to the Input 344

7.4.9 Transformation of the Noise Sources 345

7.4.10 ABCD Parameters for CE, CC, and CB Configurations 345

7.5 Noisy Two-Port Description 347

7.6 Noise Figure of Cascaded Networks 353

7.7 Influence of External Parasitic Elements 354

7.8 Noise Circles 357

7.9 Noise Correlation in Linear Two-Ports Using Correlation Matrices 360

7.10 Noise Figure Test Equipment 363

7.11 How to Determine Noise Parameters 365

7.12 Noise in Nonlinear Circuits 366

7.12.1 Noise Sources in the Nonlinear Domain 368

7.13 Transistor Noise Modeling 371

7.13.1 Noise Modeling of Bipolar and Heterobipolar Transistors 372

7.13.2 Noise Modeling of Field-effect Transistors 384

References 390

Bibliography 393

Problems 395

8 Small- and Large-Signal Amplifier Design 397

8.1 Introduction 397

8.2 Single-Stage Amplifier Design 399

8.2.1 High Gain 399

8.2.2 Maximum Available Gain and Unilateral Gain 400

8.2.3 Low-Noise Amplifier 407

8.2.4 High-Power Amplifier 409

8.2.5 Broadband Amplifier 410

8.2.6 Feedback Amplifier 411

8.2.7 Cascode Amplifier 413

8.2.8 Multistage Amplifier 420

8.2.9 Distributed Amplifier and Matrix Amplifier 421

8.2.10 Millimeter-Wave Amplifiers 425

8.3 Frequency Multipliers 426

8.3.1 Introduction 426

8.3.2 Passive Frequency Multiplication 426

8.3.3 Active Frequency Multiplication 427

8.4 Design Example of 1.9-GHz PCS and 2.1-GHz W-CDMA Amplifiers 429

8.5 Stability Analysis and Limitations 430

References 435

Bibliography 438

Problems 440

9 Power Amplifier Design 442

9.1 Introduction 442

9.2 Characterizing Transistors for Power-Amplifier Design 445

9.3 Single-Stage Power Amplifier Design 449

9.4 Multistage Design 455

9.5 Power-Distributed Amplifiers 462

9.6 Class of Operation 480

9.6.1 Optimizing Conduction Angle 481

9.6.2 Optimizing Harmonic Termination 490

9.6.3 Analog Switch-Mode Amplifiers 494

9.7 Efficiency and Linearity Enhancement PA Topologies 498

9.7.1 The Doherty Amplifier 499

9.7.2 Outphasing Amplifiers 502

9.7.3 Kahn EER and Envelope Tracking Amplifiers 505

9.8 Digital Microwave Power Amplifiers (class-D/S) 514

9.8.1 Voltage-Mode Topology 516

9.8.2 Current-Mode Topology 521

9.9 Power Amplifier Stability 527

References 530

Bibliography 534

Problems 536

10 Oscillator Design 538

10.1 Introduction 538

10.2 Compressed Smith Chart 544

10.3 Series or Parallel Resonance 545

10.4 Resonators 546

10.4.1 Dielectric Resonators 547

10.4.2 YIG Resonators 552

10.4.3 Varactor Resonators 552

10.4.4 Ceramic Resonators 556

10.4.5 Coupled Resonator 558

10.4.6 Resonator Measurements 564

10.5 Two-Port Oscillator Design 570

10.6 Negative Resistance From Transistor Model 579

10.7 Oscillator Q and Output Power 586

10.8 Noise in Oscillators: Linear Approach 590

10.8.1 Leeson's Oscillator Model 590

10.8.2 Low-Noise Design 596

10.9 Analytic Approach to Optimum Oscillator Design Using S Parameters 608

10.10 Nonlinear Active Models for Oscillators 621

10.10.1 Diodes with Hyperabrupt Junction 623

10.10.2 Silicon Versus Gallium Arsenide 624

10.10.3 Expressions for gm and Gd 625

10.10.4 Nonlinear Expressions for Cgs, Ggf, and Ri 627

10.10.5 Analytic Simulation of I-V Characteristics 628

10.10.6 Equivalent-Circuit Derivation 628

10.10.7 Determination of Oscillation Conditions 631

10.10.8 Nonlinear Analysis 631

10.10.9 Conclusion 632

10.11 Oscillator Design Using Nonlinear Cad Tools 632

10.11.1 Parameter Extraction Method 637

10.11.2 Example of Nonlinear Design Methodology: 4-GHz Oscillator- Amplifier 639

10.11.3 Conclusion 645

10.12 Microwave Oscillators Performance 647

10.13 Design of an Oscillator Using Large-Signal Y Parameters 651

10.14 Example for Large-Signal Design Based on Bessel Functions 653

10.15 Design Example for Best Phase Noise and Good Output Power 658

Requirements 658

Design Steps 658

Design Calculations 662

10.16 A Design Example for a 350 MHz Fixed Frequency Colpitts Oscillator 666

Step 1: 667

Step 2: Biasing 667

Step 3: Determination of the Large Signal Transconductance 668

10.17 1/f NOISE 678

10.18 2400 MHz MOSFET-Based Push-Pull Oscillator 681

10.18.1 Design Equations 682

10.18.2 Design Calculations 687

10.18.3 Phase Noise 688

10.19 CAD Solution for Calculating Phase Noise in Oscillators 691

10.19.1 General Analysis of Noise Due to Modulation and Conversion in Oscillators 691

10.19.2 Modulation by a Sinusoidal Signal 692

10.19.3 Modulation by a Noise Signal 693

10.19.4 Oscillator Noise Models 695

10.19.5 Modulation and Conversion Noise 696

10.19.6 Nonlinear Approach for Computation of Noise Analysis of Oscillator Circuits 696

10.19.7 Noise Generation in Oscillators 699

10.19.8 Frequency Conversion Approach 699

10.19.9 Conversion Noise Analysis 699

10.19.10 Noise Performance Index Due to Frequency Conversion 700

10.19.11 Modulation Noise Analysis 702

10.19.12 Noise Performance Index Due to Contribution of Modulation Noise 704

10.19.13 PM-AM Correlation Coefficient 705

10.20 Phase Noise Measurement 706

10.20.1 Phase Noise Measurement Techniques 706

10.21 Back to Conventional Phase Noise Measurement System (Hewlett-Packard) 724

10.22 State-of-the-art 730

10.22.1 Analog Signal Path 730

10.22.2 Digital Signal Path 732

10.22.3 Pulsed Phase Noise Measurement 735

10.22.4 Cross-Correlation 736

10.23 Instrument Performance 737

10.24 Noise in Circuits and Semiconductors [10.74] 738

10.25 Validation Circuits 742

10.25.1 1000-MHz Ceramic Resonator Oscillator (CRO) 742

10.25.2 4100-MHz Oscillator with Transmission Line Resonators 745

10.25.3 2000-MHz GaAs FET-Based Oscillator 747

10.26 Analytical Approach for Designing Efficient Microwave FET and Bipolar Oscillators (Optimum Power) 751

10.26.1 Series Feedback...
Details
Erscheinungsjahr: 2021
Fachbereich: Nachrichtentechnik
Genre: Technik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Seiten: 1200
Inhalt: 1200 S.
ISBN-13: 9781118449752
ISBN-10: 1118449754
Sprache: Englisch
Einband: Gebunden
Autor: Vendelin, George D
Pavio, Anthony M
Rohde, Ulrich L
Rudolph, Matthias
Auflage: 3rd Revised edition
Hersteller: Wiley
John Wiley & Sons
Maße: 257 x 185 x 51 mm
Von/Mit: George D Vendelin (u. a.)
Erscheinungsdatum: 27.04.2021
Gewicht: 2 kg
preigu-id: 111790633
Über den Autor

George D. Vendelin is Adjunct Professor at Stanford, Santa Clara, and San Jose State Universities, as well as UC-Berkeley-Extension. He is a Fellow of the IEEE and has over 40 years of microwave engineering design and teaching experience.

Anthony M. Pavio, PhD, is Manager of the Phoenix Design Center for Rockwell Collins. He is a Fellow of the IEEE and was previously Manager at the Integrated RF Ceramics Center for Motorola Labs.

Ulrich L. Rohde is a Professor of Technical Informatics, University of the Joint Armed Forces, in Munich, Germany; a member of the staff of other universities world-wide; partner of Rohde & Schwarz, Munich; and Chairman of the Board of Synergy Microwave Corporation. He is the author of two editions of Microwave and Wireless Synthesizers: Theory and Design.

Dr.-Ing. Matthias Rudolph is Ulrich L. Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology in Cottbus, Germany and heads the low-noise components lab at the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik in Berlin.

Inhaltsverzeichnis
Foreword xvii

Preface To The Third Edition xix

1 RF/Microwave Systems 1

1.1 Introduction 1

1.2 Maxwell's Equations 11

1.3 Frequency Bands, Modes, and Waveforms of Operation 13

1.4 Analog and Digital Signals 15

1.5 Elementary Functions 26

1.6 Basic RF Transmitters and Receivers 32

1.7 RF Wireless/Microwave/Millimeter Wave Applications 34

1.8 Modern CAD for Nonlinear Circuit Analysis 37

1.9 Dynamic Load Line 38

References 39

Bibliography 40

Problems 41

2 Lumped and Distributed Elements 43

2.1 Introduction 43

2.2 Transition from RF to Microwave Circuits 43

2.3 Parasitic Effects on Lumped Elements 46

2.4 Distributed Elements 53

2.5 Hybrid Element: Helical Coil 54

References 55

Bibliography 57

Problems 57

3 Active Devices 59

3.1 Introduction 59

3.2 Diodes 60

3.2.1 Large-Signal Diode Model 61

3.2.2 Mixer and Detector Diodes 65

3.2.3 Parameter Trade-Offs 70

3.2.4 Mixer Diodes 72

3.2.5 PIN Diodes 73

3.2.6 Tuning Diodes 84

3.2.7 Q Factor or Diode Loss 94

3.2.8 Diode Problems 99

3.2.9 Diode-Tuned Resonant Circuits 105

3.3 Microwave Transistors 110

3.3.1 Transistor Classification 110

3.3.2 Bipolar Transistor Basics 113

3.3.3 GaAs and InP Heterojunction Bipolar Transistors 127

3.3.4 SiGe HBTs 141

3.3.5 Field-Effect Transistor Basics 147

3.3.6 GaN, GaAs, and InP HEMTs 158

3.3.7 MOSFETs 165

3.3.8 Packaged Transistors 182

3.4 Example: Selecting Transistor and Bias for Low-Noise Amplification 186

3.5 Example: Selecting Transistor and Bias for Oscillator Design 191

3.6 Example: Selecting Transistor and Bias for Power Amplification 194

3.6.1 Biasing HEMTs 196

3.6.2 Biasing HBTs 198

References 200

Bibliography 203

Problems 204

4 Two-Port Networks 205

4.1 Introduction 205

4.2 Two-Port Parameters 206

4.3 S Parameters 216

4.4 S Parameters from SPICE Analysis 216

4.5 Mason Graphs 217

4.6 Stability 221

4.7 Power Gains, Voltage Gain, and Current Gain 223

4.7.1 Power Gain 223

4.7.2 Voltage Gain and Current Gain 229

4.7.3 Current Gain 230

4.8 Three-Ports 231

4.9 Derivation of Transducer Power Gain 234

4.10 Differential S Parameters 236

4.10.1 Measurements 239

4.10.2 Example 239

4.11 Twisted-Wire Pair Lines 240

4.12 Low-Noise and High-Power Amplifier Design 242

4.13 Low-Noise Amplifier Design Examples 245

References 254

Bibliography 255

Problems 255

5 Impedance Matching 261

5.1 Introduction 261

5.2 Smith Charts and Matching 261

5.3 Impedance Matching Networks 269

5.4 Single-Element Matching 269

5.5 Two-Element Matching 271

5.6 Matching Networks Using Lumped Elements 272

5.7 Matching Networks Using Distributed Elements 273

5.7.1 Twisted-Wire Pair Transformers 273

5.7.2 Transmission Line Transformers 274

5.7.3 Tapered Transmission Lines 276

5.8 Bandwidth Constraints for Matching Networks 277

References 287

BIBLIOGRAPHY 288

PROBLEMS 288

6 Microwave Filters 294

6.1 Introduction 294

6.2 Low-Pass Prototype Filter Design 295

6.2.1 Butterworth Response 295

6.2.2 Chebyshev Response 297

6.3 Transformations 302

6.3.1 Low-Pass Filters: Frequency and Impedance Scaling 302

6.3.2 High-Pass Filters 302

6.3.3 Bandpass Filters 304

6.3.4 Narrow-Band Bandpass Filters 306

6.3.5 Band-Stop Filters 309

6.4 Transmission Line Filters 312

6.4.1 Semilumped Low-Pass Filters 315

6.4.2 Richards Transformation 318

6.5 Exact Designs and CAD Tools 325

6.6 Real-Life Filters 326

6.6.1 Lumped Elements 326

6.6.2 Transmission Line Elements 327

6.6.3 Cavity Resonators 327

6.6.4 Coaxial Dielectric Resonators 327

6.6.5 Thin-Film Bulk-Wave Acoustic Resonator (FBAR) 327

References 330

Bibliography 330

Problems 330

7 Noise In Linear and Nonlinear Two-Ports 332

7.1 Introduction 332

7.2 Signal-to-Noise Ratio 334

7.3 Noise Figure Measurements 336

7.4 Noise Parameters and Noise Correlation Matrix 338

7.4.1 Correlation Matrix 338

7.4.2 Method of Combining Two-Port Matrix 339

7.4.3 Noise Transformation Using the [ABCD] Noise Correlation Matrices 339

7.4.4 Relation Between the Noise Parameter and [CA] 340

7.4.5 Representation of the ABCD Correlation Matrix in Terms of Noise Parameters [7.4] 342

7.4.6 Noise Correlation Matrix Transformations 342

7.4.7 Matrix Definitions of Series and Shunt Element 343

7.4.8 Transferring All Noise Sources to the Input 344

7.4.9 Transformation of the Noise Sources 345

7.4.10 ABCD Parameters for CE, CC, and CB Configurations 345

7.5 Noisy Two-Port Description 347

7.6 Noise Figure of Cascaded Networks 353

7.7 Influence of External Parasitic Elements 354

7.8 Noise Circles 357

7.9 Noise Correlation in Linear Two-Ports Using Correlation Matrices 360

7.10 Noise Figure Test Equipment 363

7.11 How to Determine Noise Parameters 365

7.12 Noise in Nonlinear Circuits 366

7.12.1 Noise Sources in the Nonlinear Domain 368

7.13 Transistor Noise Modeling 371

7.13.1 Noise Modeling of Bipolar and Heterobipolar Transistors 372

7.13.2 Noise Modeling of Field-effect Transistors 384

References 390

Bibliography 393

Problems 395

8 Small- and Large-Signal Amplifier Design 397

8.1 Introduction 397

8.2 Single-Stage Amplifier Design 399

8.2.1 High Gain 399

8.2.2 Maximum Available Gain and Unilateral Gain 400

8.2.3 Low-Noise Amplifier 407

8.2.4 High-Power Amplifier 409

8.2.5 Broadband Amplifier 410

8.2.6 Feedback Amplifier 411

8.2.7 Cascode Amplifier 413

8.2.8 Multistage Amplifier 420

8.2.9 Distributed Amplifier and Matrix Amplifier 421

8.2.10 Millimeter-Wave Amplifiers 425

8.3 Frequency Multipliers 426

8.3.1 Introduction 426

8.3.2 Passive Frequency Multiplication 426

8.3.3 Active Frequency Multiplication 427

8.4 Design Example of 1.9-GHz PCS and 2.1-GHz W-CDMA Amplifiers 429

8.5 Stability Analysis and Limitations 430

References 435

Bibliography 438

Problems 440

9 Power Amplifier Design 442

9.1 Introduction 442

9.2 Characterizing Transistors for Power-Amplifier Design 445

9.3 Single-Stage Power Amplifier Design 449

9.4 Multistage Design 455

9.5 Power-Distributed Amplifiers 462

9.6 Class of Operation 480

9.6.1 Optimizing Conduction Angle 481

9.6.2 Optimizing Harmonic Termination 490

9.6.3 Analog Switch-Mode Amplifiers 494

9.7 Efficiency and Linearity Enhancement PA Topologies 498

9.7.1 The Doherty Amplifier 499

9.7.2 Outphasing Amplifiers 502

9.7.3 Kahn EER and Envelope Tracking Amplifiers 505

9.8 Digital Microwave Power Amplifiers (class-D/S) 514

9.8.1 Voltage-Mode Topology 516

9.8.2 Current-Mode Topology 521

9.9 Power Amplifier Stability 527

References 530

Bibliography 534

Problems 536

10 Oscillator Design 538

10.1 Introduction 538

10.2 Compressed Smith Chart 544

10.3 Series or Parallel Resonance 545

10.4 Resonators 546

10.4.1 Dielectric Resonators 547

10.4.2 YIG Resonators 552

10.4.3 Varactor Resonators 552

10.4.4 Ceramic Resonators 556

10.4.5 Coupled Resonator 558

10.4.6 Resonator Measurements 564

10.5 Two-Port Oscillator Design 570

10.6 Negative Resistance From Transistor Model 579

10.7 Oscillator Q and Output Power 586

10.8 Noise in Oscillators: Linear Approach 590

10.8.1 Leeson's Oscillator Model 590

10.8.2 Low-Noise Design 596

10.9 Analytic Approach to Optimum Oscillator Design Using S Parameters 608

10.10 Nonlinear Active Models for Oscillators 621

10.10.1 Diodes with Hyperabrupt Junction 623

10.10.2 Silicon Versus Gallium Arsenide 624

10.10.3 Expressions for gm and Gd 625

10.10.4 Nonlinear Expressions for Cgs, Ggf, and Ri 627

10.10.5 Analytic Simulation of I-V Characteristics 628

10.10.6 Equivalent-Circuit Derivation 628

10.10.7 Determination of Oscillation Conditions 631

10.10.8 Nonlinear Analysis 631

10.10.9 Conclusion 632

10.11 Oscillator Design Using Nonlinear Cad Tools 632

10.11.1 Parameter Extraction Method 637

10.11.2 Example of Nonlinear Design Methodology: 4-GHz Oscillator- Amplifier 639

10.11.3 Conclusion 645

10.12 Microwave Oscillators Performance 647

10.13 Design of an Oscillator Using Large-Signal Y Parameters 651

10.14 Example for Large-Signal Design Based on Bessel Functions 653

10.15 Design Example for Best Phase Noise and Good Output Power 658

Requirements 658

Design Steps 658

Design Calculations 662

10.16 A Design Example for a 350 MHz Fixed Frequency Colpitts Oscillator 666

Step 1: 667

Step 2: Biasing 667

Step 3: Determination of the Large Signal Transconductance 668

10.17 1/f NOISE 678

10.18 2400 MHz MOSFET-Based Push-Pull Oscillator 681

10.18.1 Design Equations 682

10.18.2 Design Calculations 687

10.18.3 Phase Noise 688

10.19 CAD Solution for Calculating Phase Noise in Oscillators 691

10.19.1 General Analysis of Noise Due to Modulation and Conversion in Oscillators 691

10.19.2 Modulation by a Sinusoidal Signal 692

10.19.3 Modulation by a Noise Signal 693

10.19.4 Oscillator Noise Models 695

10.19.5 Modulation and Conversion Noise 696

10.19.6 Nonlinear Approach for Computation of Noise Analysis of Oscillator Circuits 696

10.19.7 Noise Generation in Oscillators 699

10.19.8 Frequency Conversion Approach 699

10.19.9 Conversion Noise Analysis 699

10.19.10 Noise Performance Index Due to Frequency Conversion 700

10.19.11 Modulation Noise Analysis 702

10.19.12 Noise Performance Index Due to Contribution of Modulation Noise 704

10.19.13 PM-AM Correlation Coefficient 705

10.20 Phase Noise Measurement 706

10.20.1 Phase Noise Measurement Techniques 706

10.21 Back to Conventional Phase Noise Measurement System (Hewlett-Packard) 724

10.22 State-of-the-art 730

10.22.1 Analog Signal Path 730

10.22.2 Digital Signal Path 732

10.22.3 Pulsed Phase Noise Measurement 735

10.22.4 Cross-Correlation 736

10.23 Instrument Performance 737

10.24 Noise in Circuits and Semiconductors [10.74] 738

10.25 Validation Circuits 742

10.25.1 1000-MHz Ceramic Resonator Oscillator (CRO) 742

10.25.2 4100-MHz Oscillator with Transmission Line Resonators 745

10.25.3 2000-MHz GaAs FET-Based Oscillator 747

10.26 Analytical Approach for Designing Efficient Microwave FET and Bipolar Oscillators (Optimum Power) 751

10.26.1 Series Feedback...
Details
Erscheinungsjahr: 2021
Fachbereich: Nachrichtentechnik
Genre: Technik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Seiten: 1200
Inhalt: 1200 S.
ISBN-13: 9781118449752
ISBN-10: 1118449754
Sprache: Englisch
Einband: Gebunden
Autor: Vendelin, George D
Pavio, Anthony M
Rohde, Ulrich L
Rudolph, Matthias
Auflage: 3rd Revised edition
Hersteller: Wiley
John Wiley & Sons
Maße: 257 x 185 x 51 mm
Von/Mit: George D Vendelin (u. a.)
Erscheinungsdatum: 27.04.2021
Gewicht: 2 kg
preigu-id: 111790633
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