Isik C. Kizilyalli recently served as the Senior Director of Technology (R&D) Sustainability Accelerator within the Stanford Doerr School of Sustainability. Prior to joining the Accelerator, he was the Associate Director for Technology at the Advanced Research Projects Agency - Energy (ARPA-E). In this role, Dr. Kizilyalli oversaw all technology issues relating to ARPA-E's programs, program development, Program Director and Fellow recruitment, and coordinating project management across the Agency. As an ARPA-E Program Director his focus included power electronics, semiconductor devices, electrification of transportation (aviation, ships, automotive, space) and associated infrastructure, enhanced geothermal systems, subsurface instrumentation and drilling, electric distribution and transmission grids, and grid technologies and resiliency against aging, EMP, space weather, natural disaster, and cyber threats. Before joining ARPA-E, Dr. Kizilyalli served as founder and CEO/CTO of Avogy Inc. and Zolt Inc., venture backed start-ups focused on power electronics. At the 2015 International Consumer Electronics Show (CES) Zolt Inc. was a CES Best of Innovation Awards Honoree, Best Startup CES finalist (by Engadget), a Top Tech of CES nominee (by Digital Trends), and a Top Pick CES (by Laptop Magazine). Previously, he was with AT&T Bell Laboratories and its spinouts for nearly 17 years, followed by Nitronex Corporation, and solar PV startup Alta Devices where his team holds the world record for single junction solar cell conversion efficiency. Dr. Kizilyalli was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2007 for his contributions to "Integrated Circuit Technology". He also received the Bell Laboratories' Distinguished Member of Technical Staff award and the Best Paper Award at the International Symposium on Power Semiconductors and Integrated Circuits (ISPSD) in 2013. Dr. Kizilyalli holds his B.S. in Electrical Engineering, M.S. in Metallurgy, and Ph.D. in Electrical Engineering all from the University of Illinois (Urbana). He has published a Springer-Nature book on Direct Current Fault Protection, more than 100 papers and holds 127 issued U.S. patents.

Jung Han is the William Norton Professor in Technological Innovation and the Chair of Electrical and Computer Engineering at Yale University. His research interests include wide-bandgap semiconductor epitaxy, optoelectronic and microelectronic devices, semiconductor nanotechnology, lasers, VCSELs, and micro-LEDs. He has published more than 380 papers in peer-reviewed journals, and has served as editor of six books and special journal issues. He holds more than 20 U.S. patents and is the co-founder of three startup companies, Saphlux, Ganvix, and InPhred. Prof. Han has received numerous awards including an Department of Commerce R&D 100 Award, MRS Ribbon Award, and EMC Best Paper Award, EPD Award from the Electrochemical Society, and Yale's faculty Innovator Award. He is a member of the Connecticut Academy of Science and Engineering, and a fellow of the Institute of Physics, Institute of Electrical and Electronic Engineers, OPTICA, and National Academy of Inventors. Prior to joining Yale in 2001, Prof. Han was a senior technical staff member at Sandia National Laboratories where he pioneered the growth of AlGaN for UV emitters and the use of in-situ diagnostics during crystal growth, the latter has since been adopted worldwide by the LED industry. Prof. Han graduated from National Taiwan University in 1986, and earned his M.S. and Ph.D. in electrical engineering from Purdue University in 1990 and 1992, respectively.

James S. Speck is a Professor in theMaterials Department at the University of California Santa Barbara. At UCSB, his early work focused on epitaxial oxide films on semiconductors, ferroelectric thin films, and strain relaxation in highly misfitting epitaxial systems. He has worked extensively on the materials science of GaN and related alloys. Major aspects of his work on nitrides include elucidating basic growth modes and defect generation, the development of MBE growth of GaN, and the development of nonpolar and semipolar GaN. Prof. Speck received the Quantum Device Award with Umesh Mishra from the International Symposium on Compound Semiconductors in 2007, he was named an inaugural MRS Fellow in 2008, and received the JJAP Best Paper Award in 2008. In 2009 he received became an APS Fellow. In 2010 he received the IEEE Photonics Society Aron Kressel Award with Steve DenBaars for their work on nonpolar and semipolar GaN-based materials and devices. In 2007, Prof. Speck and his longtime collaborators Steve DenBaars and Shuji Nakamura founded Santa Barbara-based start-up companies Kaai and Soraa to commercialize their work on nonpolar and semipolar nitrides. In 2016 he was elected as a Fellow of the National Academy of Inventors. Prof. Speck has over 950 publications in the referred archival literature. He received his B.S.M.E. degree in metallurgical engineering from the University of Michigan in 1983 and his S.M. and Sc.D. in materials science from the Massachusetts Institute of Technology in 1985 and 1989, respectively.

Eric P. Carlson is currently a Senior Lead Scientist at Booz Allen Hamilton where he supports the DOE's Advanced Research Projects Agency-Energy (ARPA-E) as a technical support contractor. Prior to joining Booz Allen Hamilton, he served 12 years as a Research Specialist in the Compound Semiconductor Solutions Division at Dow Corning Corporation where he developed crystal growth, epitaxy, and characterization of wide band gap semiconductor materials. Before joining Dow Corning Corporation, Dr. Carlson served as the Director of GaN R&D at Kyma Technologies where he was developing bulk GaN wafers. Dr. Carlson is the author and co-author of more than 50 scientific publications and holds 6 patents. He received his B.S. and Ph.D. in materials science and engineering from North Carolina State University in 1993 and 2001, respectively.

Part 1 Introduction.- Chapter 1 Introduction to Vertical GaN Power Electronics.- Chapter 2 Electronic Transport and Advances in Vertical Bulk GaN Based Power Semiconductor Devices.- Part 2 Bulk GaN Substrates.- Chapter 3 Bulk GaN.- Chapter 4 Near Equilibrium Ammonothermal (NEAT) Growth of Low Dislocation GaN for Power Devices.- Chapter 5 Use of HVPE for Growth of Bulk GaN Wafers and GaN Epilayers for Power Electronics Applications.- Chapter 6 X-ray Topography and High-Resolution X-ray Diffraction Characterization of GaN Materials for Power Electronics Applications.- Part 3 Epitaxial Growth of Gallium Nitride and Processing.- Chapter 7 Laser assisted MOCVD GaN and the Development of Vertical GaN-on-GaN PN diodes.- Chapter 8 MOCVD Growth of GaN Drift Layers on Bulk GaN Substrates for Power Electronic Devices.- Chapter 9 MBE Grown GaN P-N Diodes.- Chapter 10 Gallium Nitride Wafer Metrology and Device Processing.- Chapter 11 Layer Transfer of Gallium Nitride by Controlled Spalling.- Part 4 Selective Area Doping, Processes, and Characterization.- Chapter 12 In-situ TBCl Etching and Selective-Area Growth and Doping of GaN.- Chapter 13 Selective Area Regrowth and Doping for Vertical GaN Power Devices.- Chapter 14 Acceptor Dopant Ion Implant and Gyrotron Rapid Thermal Annealing of GaN.- Chapter 15 Ion Implantation for p-Type Conductivity in GaN.- Chapter 16 High Energy Ion Implantation using Electrostatic Accelerators.- Chapter 17 Solid State Diffusion in GaN.- Chapter 18 Transmutation Doping of GaN.- Part 5 Materials Characterization Techniques.- Chapter 19 Deep Level Defect Spectroscopy and Electron Beam-Induced Current Characterization of GaN Junctions.- Chapter 20 Ion Beam Analysis of GaN Surfaces and Interfaces.- Chapter 21 Structural and Chemical Defect Characterization for Selectively Doped GaN.- Chapter 22 Secondary Ion Mass Spectroscopy (SIMS) Analysis of GaN Epitaxial Films.- Part 6 Gallium Nitride Materials Properties for Power Electronics Devices.- Chapter 23 Intrinsic and Extrinsic Thermal Conductivity of Gallium Nitride and Silicon Carbide.- Chapter 24 Breakdown Phenomena in GaN.- Chapter 25 Theoretical Modeling of Avalanche Currents in GaN.- Part 7 Related Wideband Gap Materials and Devices.- Chapter 26 Cubic GaN: Growth, Characterization, and Applications.- Chapter 27 Development of Wafer-Scale h-BN Quasi-Bulk Crystals.- Part 8 Future Outlook.- Chapter 28 Outlook of Wide Bandgap Semiconductors and Power Electronics in the Energy Transition Towards a More Electric Future.