JUN SOUK, PHD is a Professor in the Department of Electronic Engineering, Hanyang University, South Korea.

SHINJI MOROZUMI, PHD is the founder and chairman of Crystage Inc., Japan.

FANG-CHEN LUO, PHD is advisor to the President and Fellow of AU Optronics, Taiwan.

ION BITA, PHD leads development of display technologies and components at Apple Inc., USA.

List of Contributors xxi

Series Editor's Foreword xxv

Preface xxvii

1 Introduction 1
Fang-Chen Luo, Jun Souk, Shinji Morozumi, and Ion Bita

1.1 Introduction 1

1.2 Historic Review of TFT-LCD Manufacturing Technology Progress 1

1.2.1 Early Stage TFT and TFT-Based Displays 2

1.2.2 The 1990s: Initiation of TFT-LCD Manufacturing and Incubation of TFT-LCD Products 2

1.2.3 Late 1990s: Booming of LCD Desktop Monitor and Wide Viewing Angle Technologies 4

1.2.4 The 2000s: A Golden Time for LCD-TV Manufacturing Technology Advances 4

1.3 Analyzing the Success Factors in LCD Manufacturing 5

1.3.1 Scaling the LCD Substrate Size 7

1.3.2 Major Milestones in TFT-LCD Manufacturing Technology 9

1.3.2.1 First Revolution: AKT Cluster PECVD Tool in 1993 9

1.3.2.2 Second Revolution: Wide Viewing Angle Technology in 1997 9

1.3.2.3 Third Revolution: LC Drop Filling Technology in 2003 10

1.3.3 Major Stepping Stones Leading to the Success of Active Matrix Displays 10

References 11

2 TFT Array Process Architecture and Manufacturing Process Flow 13
Chiwoo Kim

2.1 Introduction 13

2.2 Material Properties and TFT Characteristics of a-Si, LTPS, and Metal Oxide TFTs 15

2.2.1 a-Si TFT 15

2.2.2 LTPS TFT 16

2.2.2.1 Excimer Laser Annealing (ELA) 17

2.2.3 Amorphous Oxide Semiconductor TFTs 22

2.3 a-Si TFT Array Process Architecture and Process Flow 22

2.3.1 Four-Mask Count Process Architecture for TFT-LCDs 24

2.4 Poly-Si TFT Architecture and Fabrication 27

2.5 Oxide Semiconductor TFT Architecture and Fabrication 30

2.6 TFT LCD Applications 32

2.7 Development of SLS-Based System on Glass Display [1, 11, 14, 15] 33

References 35

3 Color Filter Architecture, Materials, and Process Flow 39
Young Seok Choi, Musun Kwak, and Youn Sung Na

3.1 Introduction 39

3.2 Structure and Role of the Color Filter 39

3.2.1 Red, Green, and Blue (RGB) Layer 40

3.2.1.1 Color Coordinate and Color Gamut 41

3.2.2 Black Matrix 44

3.2.3 Overcoat and Transparent Electrode 45

3.2.4 Column Spacer 46

3.3 Color Filter Manufacturing Process Flow 46

3.3.1 Unit Process 46

3.3.1.1 Formation of Black Matrix 46

3.3.1.2 Formation of RGB Layer 48

3.3.1.3 Overcoat (OC) 51

3.3.1.4 Formation of ITO Electrodes 53

3.3.1.5 Column Spacer (Pattern Spacer) 53

3.3.2 Process Flow for Different LC Mode 54

3.3.2.1 Color Filter for the TN Mode 54

3.3.2.2 Color Filter for the IPS Mode 54

3.3.2.3 Color Filter for the VA Mode 55

3.4 New Color Filter Design 55

3.4.1 White Color (Four Primary Colors) Technology 55

3.4.2 Color Filter on TFT 56

References 57

4 Liquid Crystal Cell Process 59
Heung-Shik Park and Ki-Chul Shin

4.1 Introduction 59

4.2 Liquid Crystal Cell Process 59

4.2.1 Alignment Layer Treatment 61

4.2.2 Process of Applying PI Layers 62

4.2.3 Rubbing Process 63

4.2.4 Photo-Alignment Process 64

4.2.5 LC Filling Process 65

4.2.5.1 Vacuum Filling Method 66

4.2.5.2 End Seal Process 66

4.2.5.3 One Drop Filling (ODF) Method 67

4.2.6 Vacuum Assembly Process 68

4.2.7 Polarizer Attachment Process 69

4.3 Conclusions 70

Acknowledgments 70

References 70

5 TFT-LCD Module and Package Process 73
Chun Chang Hung

5.1 Introduction 73

5.2 Driver IC Bonding: TAB and COG 73

5.3 Introduction to Large-Panel JI Process 74

5.3.1 COF Bonding 75

5.3.1.1 Edge Clean 75

5.3.1.2 ACF Attachment 76

5.3.1.3 COF Pre-Bonding 77

5.3.1.4 COF Main Bonding 78

5.3.1.5 Lead Check 78

5.3.1.6 Silicone Dispensing 78

5.3.2 PCB Bonding 79

5.3.3 PCB Test 79

5.3.4 Press Heads: Long Bar or Short Bar 79

5.4 Introduction to Small-Panel JI Process 79

5.4.1 Beveling 80

5.4.2 Panel Cleaning 80

5.4.3 Polarizer Attachment 80

5.4.4 Chip on Glass (COG) Bonding 81

5.4.5 FPC on Glass (FOG) Bonding 81

5.4.6 Optical Microscope (OM) Inspection 81

5.4.7 UV Glue Dispense 82

5.4.8 Post Bonding Inspection (PBI) 82

5.4.9 Protection Glue Dispensing 82

5.5 LCD Module Assembly 83

5.6 Aging 84

5.7 Module in Backlight or Backlight in Module 85

References 86

6 LCD Backlights 87
Insun Hwang and Jae-Hyeon Ko

6.1 Introduction 87

6.2 LED Sources 90

6.2.1 GaN Epi-Wafer on Sapphire 92

6.2.2 LED Chip 93

6.2.3 Light Extraction 94

6.2.4 LED Package 96

6.2.5 SMT on FPCB 97

6.3 Light Guide Plate 98

6.3.1 Optical Principles of LGP 98

6.3.2 Optical Pattern Design 99

6.3.3 Manufacturing of LGP 101

6.3.3.1 Injection Molding 101

6.3.3.2 Screen Printing 102

6.3.3.3 Other Methods 103

6.4 Optical Films 104

6.4.1 Diffuser 106

6.4.2 Prism Film 107

6.4.3 Reflector 108

6.4.4 Other Films 108

6.5 Direct-Type BLU 111

6.6 Summary 111

References 112

7 TFT Backplane and Issues for OLED 115
Chiwoo Kim

7.1 Introduction 115

7.2 LTPS TFT Backplane for OLED Films 116

7.2.1 Advanced Excimer Laser Annealing (AELA) for Large-Sized AMOLED Displays 117

7.2.2 Line-Scan Sequential Lateral Solidification Process for AMOLED Application 120

7.3 Oxide Semiconductor TFT for OLED 122

7.3.1 Oxide TFT-Based OLED for Large-Sized TVs 123

7.4 Best Backplane Solution for AMOLED 125

References 127

8A OLED Manufacturing Process for Mobile Application 129
Jang Hyuk Kwon and Raju Lampande

8A.1 Introduction 129

8A.2 Current Status of AMOLED for Mobile Display 130

8A.2.1 Top Emission Technology 130

8A.3 Fine Metal Mask Technology (Shadow Mask Technology) 133

8A.4 Encapsulation Techniques for OLEDs 135

8A.4.1 Frit Sealing 135

8A.4.2 Thin-Film Encapsulation 136

8A.5 Flexible OLED technology 137

8A.6 AMOLED Manufacturing Process 137

8A.7 Summary 140

References 140

8B OLED Manufacturing Process for TV Application 143
Chang Wook Han and Yoon Heung Tak

8B.1 Introduction 143

8B.2 Fine Metal Mask (FMM) 144

8B.3 Manufacturing Process for White OLED and Color Filter Methods 147

8B.3.1 One-Stacked White OLED Device 149

8B.3.2 Two-Stacked White OLED Device 152

8B.3.3 Three-Stacked White-OLED Device 155

References 157

9 OLED Encapsulation Technology 159
Young-Hoon Shin

9.1 Introduction 159

9.2 Principles of OLED Encapsulation 159

9.2.1 Effect of H2O 160

9.3 Classification of Encapsulation Technologies 162

9.3.1 Edge Seal 163

9.3.2 Frit Seal 164

9.3.3 Dam and Fill 166

9.3.4 Face Seal 167

9.3.5 Thin-Film Encapsulation (TFE) 168

9.4 Summary 170

References 170

10 Flexible OLED Manufacturing 173
Woojae Lee and Jun Souk

10.1 Introduction 173

10.2 Critical Technologies in Flexible OLED Display 174

10.2.1 High-Temperature PI Film 175

10.2.2 Encapsulation Layer 176

10.2.2.1 Thin-Film Encapsulation (TFE) Method 176

10.2.2.2 Hyrid Encapsulation Method 177

10.2.2.3 Other Encapsulation Methods 178

10.2.2.4 Measurement of Barrier Performance 179

10.2.3 Laser Lift-Off 180

10.2.4 Touch Sensor on F-OLED 181

10.3 Process Flow of F-OLED 181

10.3.1 PI Film Coating and Curing 181

10.3.2 LTPS TFT Backplane Process 183

10.3.3 OLED Deposition Process 183

10.3.4 Thin-Film Encapsulation 185

10.3.5 Laser Lift-Off 185

10.3.6 Lamination of Backing Plastic Film and Cut to Cell Size 185

10.3.7 Touch Sensor Attach 186

10.3.8 Circular Polarizer Attach 186

10.3.9 Module Assembly (Bonding Drive IC) 186

10.4 Foldable OLED 186

10.5 Summary 188

References 189

11A Metal Lines and ITO PVD 193
Hyun Eok Shin, Chang Oh Jeong, and Junho Song

11A.1 Introduction 193

11A.1.1 Basic Requirements of Metallization for Display 193

11A.1.2 Thin-Film Deposition by Sputtering 195

11A.2 Metal Line Evolution in Past Years of TFT-LCD 198

11A.2.1 Gate Line Metals 199

11A.2.1.1 Al and Al Alloy Electrode 199

11A.2.1.2 Cu Electrode 201

11A.2.2 Data line (Source/Drain) Metals 202

11A.2.2.1 Data Al Metal 202

11A.2.2.2 Data Cu Metal 203

11A.2.2.3 Data Chromium (Cr) Metal 203

11A.2.2.4 Molybdenum (Mo) Metal 203

11A.2.2.5 Titanium (Ti) Metal 204

11A.3 Metallization for OLED Display 205

11A.3.1 Gate Line Metals 205

11A.3.2 Source/Drain Metals 205

11A.3.3 Pixel Anode 206

11A.4 Transparent Electrode 207

References 208

11B Thin-Film PVD: Materials, Processes, and Equipment 209
Tetsuhiro Ohno

11B.1 Introduction 209

11B.2 Sputtering Method 210

11B.3 Evolution of Sputtering Equipment for FPD Devices 212

11B.3.1 Cluster Tool for Gen 2 Size 212

11B.3.2 Cluster Tool for Gen 4.5 to Gen 7 Size 213

11B.3.3 Vertical Cluster Tool for Gen 8 Size 213

11B.4 Evolution of Sputtering Cathode 215

11B.4.1 Cathode Structure Evolution 215

11B.4.2 Dynamic Multi Cathode for LTPS 217

11B.4.3 Cathode Selection Strategy 217

11B.5 Transparent Oxide Semiconductor (TOS) Thin-Film Deposition Technology 218

11B.5.1 Deposition Equipment for TOS-TFT 218

11B.5.2 New Cathode Structure for TOS-TFT 219

11B.6 Metallization Materials and Deposition Technology 221

References 223

11C Thin-Film PVD (Rotary Target) 225

Marcus Bender

11C. 1 Introduction 225

11C.2 Source Technology 227

11C.2.1 Planar Cathodes 227

11C.2.2 Rotary Cathodes 229

11C.2.3 Rotary Cathode Array 230

11C.3 Materials, Processes, and Characterization 232

11C.3.1 Introduction 232

11C.3.2 Backplane Metallization 232

11C.3.3 Layers for Metal-Oxide TFTs 234

11C.3.4 Transparent Electrodes 236

11C.3.5 Adding Touch Functionality and Improving End-User Experience 238

References 239

12A Thin-Film PECVD (AKT) 241
Tae Kyung Won, Soo Young Choi, and John M. White

12A.1 Introduction 241

12A.2 Process Chamber Technology 243

12A.2.1 Electrode Design 243

12A.2.1.1 Hollow Cathode Effect and Hollow Cathode Gradient 243

12A.2.1.2 Gas Flow Control 245

12A.2.1.3 Susceptor 245

12A.2.2 Chamber Cleaning 246

12A.3 Thin-Film Material, Process, and Characterization 248

12A.3.1 Amorphous Si (a-Si) TFT 248

12A.3.1.1 Silicon Nitride (SiN) 248

12A.3.1.2 Amorphous Silicon (a-Si) 253

12A.3.1.3 Phosphorus-Doped Amorphous Silicon (n+ a-Si) 257

12A.3.2 Low-Temperature Poly Silicon (LTPS) TFT 258

12A.3.2.1 Silicon Oxide (SiO) 259

12A.3.2.2 a-Si Precursor Film (Dehydrogenation) 260

12A.3.3 Metal-Oxide (MO) TFT 263

12A.3.3.1 Silicon Oxide (SiO) 265

12A.3.4 Thin-Film Encapsulation (TFE) 269

12A.3.4.1 Barrier Layer (Silicon Nitride) 269

12A.3.4.2 Buffer Layer...