Salvador Pinillos Gimenez is a Full Professor at the Department of Electrical Engineering, Centro Universitário FEI (FEI-SP) and MTG2i Solutions Co., São Paulo, Brazil. In 1984, he received his B.Sc. degree in Electronic Engineering from UMC, São Paulo, Brazil. He obtained the M.Sc. degree in Electrical Engineering from Microelectronic Lab. of São Paulo University (LME/EPUSP) in 1990. In October 2004, he obtained the Ph.D. degree in Microelectronics. His general interests are in new MOSFETs, FinFETs, power devices, design and optimization of analog and radiofrequency CMOS ICs by using computational tools based on Artificial Inteligence (iMTGSPICE) and parallel digital processing.

Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs

Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing

Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment

Chapter 1. Introduction.- Chapter 2. Basic concepts of the semiconductor physics.- Chapter 3. The electrical characteristics of the semiconductor at high temperatures.- Chapter 4. The MOSFET.- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs.- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.