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Salvador Pinillos Gimenez is a Full Professor at the Department of Electrical Engineering, Centro Universitário FEI (FEI-SP) and MTG2i Solutions Co., São Paulo, Brazil. In 1984, he received his B.Sc. degree in Electronic Engineering from UMC, São Paulo, Brazil. He obtained the M.Sc. degree in Electrical Engineering from Microelectronic Lab. of São Paulo University (LME/EPUSP) in 1990. In October 2004, he obtained the Ph.D. degree in Microelectronics. His general interests are in new MOSFETs, FinFETs, power devices, design and optimization of analog and radiofrequency CMOS ICs by using computational tools based on Artificial Inteligence (iMTGSPICE) and parallel digital processing.
Egon Henrique Salerno Galembeck is a researcher at MTG2i Solutions Co. in the research lines of design and optimization of analog and radio frequency CMOS ICs, electrical characterization of transistors in harsh environment and three-dimensional numerical simulation of MOS devices. In2013, he received the electrical engineering degree from Centro Universitário FEI, São Paulo, Brazil. He obtained the M. Sc. degree in Electrical Engineering in the area of ¿¿Integrated Electronic Devices from Centro Universitário FEI, in September 2015. He received his Ph.D. degree in Electrical Engineering in the area of Nanoelectronics and Integrated Devices from Centro Universitário FEI, São Paulo, Brazil, in 2022.
Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs
Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing
Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment
Chapter 1. Introduction.- Chapter 2. Basic concepts of the semiconductor physics.- Chapter 3. The electrical characteristics of the semiconductor at high temperatures.- Chapter 4. The MOSFET.- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs.- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.
| Erscheinungsjahr: | 2023 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Buch |
| Seiten: | 224 |
| Inhalt: |
vii
216 S. 4 s/w Illustr. 107 farbige Illustr. 216 p. 111 illus. 107 illus. in color. |
| ISBN-13: | 9783031290855 |
| ISBN-10: | 3031290852 |
| Sprache: | Englisch |
| Ausstattung / Beilage: | HC runder Rücken kaschiert |
| Einband: | Gebunden |
| Autor: |
Galembeck, Egon Henrique Salerno
Gimenez, Salvador Pinillos |
| Auflage: | 2023 |
| Hersteller: | Springer International Publishing |
| Maße: | 241 x 160 x 18 mm |
| Von/Mit: | Egon Henrique Salerno Galembeck (u. a.) |
| Erscheinungsdatum: | 06.05.2023 |
| Gewicht: | 0,506 kg |
Salvador Pinillos Gimenez is a Full Professor at the Department of Electrical Engineering, Centro Universitário FEI (FEI-SP) and MTG2i Solutions Co., São Paulo, Brazil. In 1984, he received his B.Sc. degree in Electronic Engineering from UMC, São Paulo, Brazil. He obtained the M.Sc. degree in Electrical Engineering from Microelectronic Lab. of São Paulo University (LME/EPUSP) in 1990. In October 2004, he obtained the Ph.D. degree in Microelectronics. His general interests are in new MOSFETs, FinFETs, power devices, design and optimization of analog and radiofrequency CMOS ICs by using computational tools based on Artificial Inteligence (iMTGSPICE) and parallel digital processing.
Egon Henrique Salerno Galembeck is a researcher at MTG2i Solutions Co. in the research lines of design and optimization of analog and radio frequency CMOS ICs, electrical characterization of transistors in harsh environment and three-dimensional numerical simulation of MOS devices. In2013, he received the electrical engineering degree from Centro Universitário FEI, São Paulo, Brazil. He obtained the M. Sc. degree in Electrical Engineering in the area of ¿¿Integrated Electronic Devices from Centro Universitário FEI, in September 2015. He received his Ph.D. degree in Electrical Engineering in the area of Nanoelectronics and Integrated Devices from Centro Universitário FEI, São Paulo, Brazil, in 2022.
Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs
Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing
Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment
Chapter 1. Introduction.- Chapter 2. Basic concepts of the semiconductor physics.- Chapter 3. The electrical characteristics of the semiconductor at high temperatures.- Chapter 4. The MOSFET.- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs.- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.
| Erscheinungsjahr: | 2023 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Buch |
| Seiten: | 224 |
| Inhalt: |
vii
216 S. 4 s/w Illustr. 107 farbige Illustr. 216 p. 111 illus. 107 illus. in color. |
| ISBN-13: | 9783031290855 |
| ISBN-10: | 3031290852 |
| Sprache: | Englisch |
| Ausstattung / Beilage: | HC runder Rücken kaschiert |
| Einband: | Gebunden |
| Autor: |
Galembeck, Egon Henrique Salerno
Gimenez, Salvador Pinillos |
| Auflage: | 2023 |
| Hersteller: | Springer International Publishing |
| Maße: | 241 x 160 x 18 mm |
| Von/Mit: | Egon Henrique Salerno Galembeck (u. a.) |
| Erscheinungsdatum: | 06.05.2023 |
| Gewicht: | 0,506 kg |
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