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Cover: 9783659662188 | Ultra-fast Microwave Annealing of Silicon Carbide and Gallium Nitride
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Ultra-fast Microwave Annealing of Silicon Carbide and Gallium Nitride
Taschenbuch von Siddarth Sundaresan (u. a.)
Sprache: Englisch

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Beschreibung
A novel solid-state microwave annealing technique is developed for post-implantation annealing of silicon carbide (SiC) and Gallium Nitride (GaN), and for the controlled growth of SiC nanowires. This technique is capable of heating SiC samples to temperatures in excess of 2100 ºC, at ultra-fast temperature ramping rates > 600 ºC/s. For phosphorus and aluminum implanted SiC, sheet resistances as low as 14 ¿/sq¿ and 1.9 k¿/sq¿ and majority carrier mobilities as high as 100 cm2/Vs and 8.3 cm2/Vs, respectively, are obtained. For the Al+ -implanted SiC, hole mobilties as high as 8.3 cm2/Vs is obtained. These values constitute the best ever reported electrical characteristics for high-dose ion-implanted SiC. Microwave annealing of in-situ as well as ion-implantation acceptor doped GaN was performed in the temperature range of 1200 ºC ¿ 1600 ºC, for a duration of 5 s, using different protective caps (AlN, MgO, graphite). A patented, metal catalyst assisted sublimation sandwich method is invented for the growth of microwave-heating assisted cubic 3C-SiC nanowires.
A novel solid-state microwave annealing technique is developed for post-implantation annealing of silicon carbide (SiC) and Gallium Nitride (GaN), and for the controlled growth of SiC nanowires. This technique is capable of heating SiC samples to temperatures in excess of 2100 ºC, at ultra-fast temperature ramping rates > 600 ºC/s. For phosphorus and aluminum implanted SiC, sheet resistances as low as 14 ¿/sq¿ and 1.9 k¿/sq¿ and majority carrier mobilities as high as 100 cm2/Vs and 8.3 cm2/Vs, respectively, are obtained. For the Al+ -implanted SiC, hole mobilties as high as 8.3 cm2/Vs is obtained. These values constitute the best ever reported electrical characteristics for high-dose ion-implanted SiC. Microwave annealing of in-situ as well as ion-implantation acceptor doped GaN was performed in the temperature range of 1200 ºC ¿ 1600 ºC, for a duration of 5 s, using different protective caps (AlN, MgO, graphite). A patented, metal catalyst assisted sublimation sandwich method is invented for the growth of microwave-heating assisted cubic 3C-SiC nanowires.
Über den Autor
Siddarth Sundaresan, PhD, is the Director of Technology at GeneSiC Semiconductor. He has published extensively on wide-bandgap materials, process and device technology. Dr. Sundaresan was the recipient of a 2011 R&D 100 Award for commercializing the world's first high-voltage silicon carbide Thyristors
Details
Erscheinungsjahr: 2015
Fachbereich: Nachrichtentechnik
Genre: Mathematik, Medizin, Naturwissenschaften, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: 196 S.
ISBN-13: 9783659662188
ISBN-10: 3659662186
Sprache: Englisch
Ausstattung / Beilage: Paperback
Einband: Kartoniert / Broschiert
Autor: Sundaresan, Siddarth
V. Rao, Mulpuri
Hersteller: LAP LAMBERT Academic Publishing
Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivibas Gatve 197, ?-1039 Riga, customerservice@vdm-vsg.de
Maße: 220 x 150 x 12 mm
Von/Mit: Siddarth Sundaresan (u. a.)
Erscheinungsdatum: 02.06.2015
Gewicht: 0,31 kg
Artikel-ID: 104570229
Über den Autor
Siddarth Sundaresan, PhD, is the Director of Technology at GeneSiC Semiconductor. He has published extensively on wide-bandgap materials, process and device technology. Dr. Sundaresan was the recipient of a 2011 R&D 100 Award for commercializing the world's first high-voltage silicon carbide Thyristors
Details
Erscheinungsjahr: 2015
Fachbereich: Nachrichtentechnik
Genre: Mathematik, Medizin, Naturwissenschaften, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: 196 S.
ISBN-13: 9783659662188
ISBN-10: 3659662186
Sprache: Englisch
Ausstattung / Beilage: Paperback
Einband: Kartoniert / Broschiert
Autor: Sundaresan, Siddarth
V. Rao, Mulpuri
Hersteller: LAP LAMBERT Academic Publishing
Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivibas Gatve 197, ?-1039 Riga, customerservice@vdm-vsg.de
Maße: 220 x 150 x 12 mm
Von/Mit: Siddarth Sundaresan (u. a.)
Erscheinungsdatum: 02.06.2015
Gewicht: 0,31 kg
Artikel-ID: 104570229
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