Dekorationsartikel gehören nicht zum Leistungsumfang.
Sprache:
Englisch
Regulärer Preis:
inkl. MwSt.
33,95 €
Versandkostenfrei per Post / DHL
Lieferzeit 4-7 Werktage
Kategorien:
Beschreibung
III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials.
III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials.
Über den Autor
Dr. Mansour S. Farhan, a Professor at College of Engineering/Wasit University. He has an experience in thin film fabrication technology of Optoelectronic devices - Dr. Hasan F. Khazaal, an Assistant Professor at College of Engineering/Wasit University . He has an experience in fabrication and tuning of microwave circuits and educational technology.
Details
| Erscheinungsjahr: | 2018 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Importe, Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Taschenbuch |
| Inhalt: | 104 S. |
| ISBN-13: | 9786139851669 |
| ISBN-10: | 6139851661 |
| Sprache: | Englisch |
| Einband: | Kartoniert / Broschiert |
| Autor: |
Farhan, Mansour
Khazaal, Hasan |
| Hersteller: | LAP LAMBERT Academic Publishing |
| Verantwortliche Person für die EU: | LAP Lambert Academic Publishing, Brivibas Gatve 197, ?-1039 Riga, customerservice@vdm-vsg.de |
| Maße: | 220 x 150 x 7 mm |
| Von/Mit: | Mansour Farhan (u. a.) |
| Erscheinungsdatum: | 07.08.2018 |
| Gewicht: | 0,173 kg |