Jacopo Franco received the M.Sc. in Electronic Engineering from Università della Calabria, Italy, in 2008 and the Ph.D. degree in Engineering from the KU Leuven, Belgium, in 2013. He is currently a Researcher in the reliability group of imec, Leuven, Belgium. His research interests focus on the reliability of high-mobility channel transistors for future CMOS nodes and on variability issues in nanoscale devices. He has co-authored more than 70 papers in international journal and conference proceedings and received the Best Student Paper Award at SISC (2009), the EDS Ph.D. Student Fellowship (2012), the EDS Paul Rappaport Award (2011), and the Best Paper Award at IRPS (2012).

Ben Kaczer is a Principal Scientist at imec, Belgium. He received the M.S. degree in Physical Electronics from Charles University, Prague, in 1992 and the M.S. and Ph.D. degrees in Physics from The Ohio State University, in 1996 and 1998, respectively. In 1998 he joined the reliability group of imec. He has co-authored more than 300 papers and received 5 Best or Outstanding IRPS and 1 IPFA Paper Awards. He is currently serving on the IEEE T. Electron Dev. Editorial Board.

Guido Groeseneken received the M.Sc. degree in 1980 and the Ph.D degree in applied sciences in 1986, both from the KU Leuven, Belgium. In 1987 he joined the R&D Laboratory of imec, Leuven, Belgium, where he is responsible for research in reliability physics for deep submicron CMOS technologies and in nanotechnology for post-CMOS applications. Since 2001 he is Professor at the KU Leuven, where he is Program Director of the Master in Nanoscience and Nanotechnology and coordinating a European Erasmus Mundus Master program in Nanoscience and nanotechnology. He became an IEEE Fellow in 2005 and an IMEC Fellow in 2007.

Review of CMOS scaling trends beyond the conventional geometric scaling era, and of advanced NBTI measurement techniques and modeling attempts

Complete reliability study of the novel (Si)Ge channel quantum well pMOSFET technology, including extensive experimental datasets collected on a variety of processed 300mm wafers

Extensive experimental data are reported

The reliability study is extended to nanoscale devices

Appeals to researchers and professionals from the multidiscipline fields of Materials Science, Electrical Engineering and Physics

Includes supplementary material: [...]

1 Introduction.- 2 Degradation mechanisms.- 3 Techniques and devices.- 4 Negative Bias Temperature Instability in (Si)Ge pMOSFETs.- 5 Negative Bias Temperature Instability in nanoscale devices.- 6 Channel Hot Carriers and other reliability mechanisms.- 7 Conclusions and perspectives.