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Low Dielectric Constant Materials for IC Applications
Buch von Paul S. Ho (u. a.)
Sprache: Englisch

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Beschreibung
Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.
Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.
Zusammenfassung
Low dielectric materials are an important component of microelectronic devices. In this carefully edited volume the leading researchers give an introduction to and a survey of the various fields of dielectrics for IC integration. The book appeals to materials reserachers, electrical engineers and advanced students.
Inhaltsverzeichnis
1 Overview on Low Dielectric Constant Materials for IC Applications.- 1.1 Introduction.- 1.2 Dielectric Constant and Bonding Characteristics.- 1.3 Material Properties and Integration Requirements.- 1.4 Characterization of Low-? Dielectrics.- 1.5 Porous Low-? Materials.- 1.6 Conclusion.- References.- 2 Materials Issues and Characterization of Low-? Dielectric Materials.- 2.1 Introduction.- 2.2 Thin-Film Material Characterization.- 2.3 General Structure-Property Relationships.- 2.4 Fluorinated Polyimide: Effect of Chemical-Structure Modifications on Film Properties.- 2.5 Crosslinked and Thermosetting Materials.- 2.6 Parylene Polymers: Effect of Thermal History on Film Properties.- 2.7 Future Challenges.- References.- 3 Structure and Property Characterization of Low-? Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron Scattering.- 3.1 Introduction.- 3.2 Two-Phase Methodology.- 3.3 Three-Phase Methodology.- 3.4 Films with Ordered Porous Structure.- 3.5 Limits of SANS Characterization Methods.- 3.6 Future Developments.- 3.7 Conclusion.- References.- 4 Vapor Deposition of Low-? Polymeric Dielectrics.- 4.1 Introduction.- 4.2 Vapor-Phase Deposition and Polymerization on Substrates.- 4.3 Parylenes.- 4.4 Polynaphthalene and Its Derivatives.- 4.5 Teflon and Its Derivatives.- 4.6 Vapor-Deposited Polyimides.- 4.7 Prospects for Vapor-Depositable Low-? Polymers.- References.- 5 Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-? Materials.- 5.1 Introduction.- 5.2 FSG Films.- 5.3 a-C:F Films.- References.- 6 Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity.- 6.1 Introduction.- 6.2 Porous Silica.- 6.3 Organosilicates.- 6.4 Porogens.- 6.5 Porous OrganosilicateMatrix Resins.- 6.6 Formation of Nanohybrids.- 6.7 Porous Organosilicates.- 6.8 Characterization of Porous Organosilicates.- 6.9 Conclusion.- References.- 7 Metal/Polymer Interfacial Interactions.- 7.1 Introduction.- 7.2 Experimental Methods.- 7.3 Metallization of Fluoropolymers.- 7.4 Polymers on Metals: Adhesion to Cu.- 7.5 Conclusion.- References.- 8 Diffusion of Metals in Polymers and During Metal/Polymer Interface Formation.- 8.1 Introduction.- 8.2 Thermodynamic Considerations.- 8.3 Effect of Metal-Polymer Interaction on the Mobility of Metal Atoms.- 8.4 Surface Diffusion, Nucleation, and Growth of Metal Films.- 8.5 Diffusion and Aggregation.- 8.6 Atomic Diffusion.- 8.7 Conclusion.- References.- 9 Plasma Etching of Low Dielectric Constant Materials.- 9.1 Introduction.- 9.2 Technological Requirements and Patterning Approaches.- 9.3 Fluorocarbon-Based Etching Processes.- 9.4 Directional Etching of Organic Low-? Materials.- 9.5 Postetch Mask-Stripping and Via-Cleaning Processes.- 9.6 Conclusion.- References.- 10 Integration of SiLK Semiconductor Dielectric.- 10.1 Introduction.- 10.2 SiLK Semiconductor Dielectric.- 10.3 Subtractive Technologies.- 10.4 Damascene Technologies.- 10.5 Cost-of-Ownership.- 10.6 Conclusion.- References.
Details
Erscheinungsjahr: 2002
Fachbereich: Elektrizität/Magnetismus/Optik
Genre: Mathematik, Medizin, Naturwissenschaften, Physik, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Reihe: Springer Series in Advanced Microelectronics
Inhalt: xix
310 S.
163 s/w Illustr.
22 s/w Fotos
141 s/w Zeichng.
ISBN-13: 9783540678199
ISBN-10: 3540678190
Sprache: Englisch
Ausstattung / Beilage: HC runder Rücken kaschiert
Einband: Gebunden
Autor: Ho, Paul S.
Leu, Jihperng
Lee, Wei W.
Redaktion: Ho, Paul S.
Lee, Wei William
Leu, Jihperng
Herausgeber: Paul S Ho/Jihperng Leu/Wei William Lee
Hersteller: Springer-Verlag GmbH
Springer Berlin Heidelberg
Springer Series in Advanced Microelectronics
Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, D-69121 Heidelberg, juergen.hartmann@springer.com
Maße: 241 x 160 x 23 mm
Von/Mit: Paul S. Ho (u. a.)
Erscheinungsdatum: 14.11.2002
Gewicht: 0,664 kg
Artikel-ID: 103497095
Zusammenfassung
Low dielectric materials are an important component of microelectronic devices. In this carefully edited volume the leading researchers give an introduction to and a survey of the various fields of dielectrics for IC integration. The book appeals to materials reserachers, electrical engineers and advanced students.
Inhaltsverzeichnis
1 Overview on Low Dielectric Constant Materials for IC Applications.- 1.1 Introduction.- 1.2 Dielectric Constant and Bonding Characteristics.- 1.3 Material Properties and Integration Requirements.- 1.4 Characterization of Low-? Dielectrics.- 1.5 Porous Low-? Materials.- 1.6 Conclusion.- References.- 2 Materials Issues and Characterization of Low-? Dielectric Materials.- 2.1 Introduction.- 2.2 Thin-Film Material Characterization.- 2.3 General Structure-Property Relationships.- 2.4 Fluorinated Polyimide: Effect of Chemical-Structure Modifications on Film Properties.- 2.5 Crosslinked and Thermosetting Materials.- 2.6 Parylene Polymers: Effect of Thermal History on Film Properties.- 2.7 Future Challenges.- References.- 3 Structure and Property Characterization of Low-? Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron Scattering.- 3.1 Introduction.- 3.2 Two-Phase Methodology.- 3.3 Three-Phase Methodology.- 3.4 Films with Ordered Porous Structure.- 3.5 Limits of SANS Characterization Methods.- 3.6 Future Developments.- 3.7 Conclusion.- References.- 4 Vapor Deposition of Low-? Polymeric Dielectrics.- 4.1 Introduction.- 4.2 Vapor-Phase Deposition and Polymerization on Substrates.- 4.3 Parylenes.- 4.4 Polynaphthalene and Its Derivatives.- 4.5 Teflon and Its Derivatives.- 4.6 Vapor-Deposited Polyimides.- 4.7 Prospects for Vapor-Depositable Low-? Polymers.- References.- 5 Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-? Materials.- 5.1 Introduction.- 5.2 FSG Films.- 5.3 a-C:F Films.- References.- 6 Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity.- 6.1 Introduction.- 6.2 Porous Silica.- 6.3 Organosilicates.- 6.4 Porogens.- 6.5 Porous OrganosilicateMatrix Resins.- 6.6 Formation of Nanohybrids.- 6.7 Porous Organosilicates.- 6.8 Characterization of Porous Organosilicates.- 6.9 Conclusion.- References.- 7 Metal/Polymer Interfacial Interactions.- 7.1 Introduction.- 7.2 Experimental Methods.- 7.3 Metallization of Fluoropolymers.- 7.4 Polymers on Metals: Adhesion to Cu.- 7.5 Conclusion.- References.- 8 Diffusion of Metals in Polymers and During Metal/Polymer Interface Formation.- 8.1 Introduction.- 8.2 Thermodynamic Considerations.- 8.3 Effect of Metal-Polymer Interaction on the Mobility of Metal Atoms.- 8.4 Surface Diffusion, Nucleation, and Growth of Metal Films.- 8.5 Diffusion and Aggregation.- 8.6 Atomic Diffusion.- 8.7 Conclusion.- References.- 9 Plasma Etching of Low Dielectric Constant Materials.- 9.1 Introduction.- 9.2 Technological Requirements and Patterning Approaches.- 9.3 Fluorocarbon-Based Etching Processes.- 9.4 Directional Etching of Organic Low-? Materials.- 9.5 Postetch Mask-Stripping and Via-Cleaning Processes.- 9.6 Conclusion.- References.- 10 Integration of SiLK Semiconductor Dielectric.- 10.1 Introduction.- 10.2 SiLK Semiconductor Dielectric.- 10.3 Subtractive Technologies.- 10.4 Damascene Technologies.- 10.5 Cost-of-Ownership.- 10.6 Conclusion.- References.
Details
Erscheinungsjahr: 2002
Fachbereich: Elektrizität/Magnetismus/Optik
Genre: Mathematik, Medizin, Naturwissenschaften, Physik, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Reihe: Springer Series in Advanced Microelectronics
Inhalt: xix
310 S.
163 s/w Illustr.
22 s/w Fotos
141 s/w Zeichng.
ISBN-13: 9783540678199
ISBN-10: 3540678190
Sprache: Englisch
Ausstattung / Beilage: HC runder Rücken kaschiert
Einband: Gebunden
Autor: Ho, Paul S.
Leu, Jihperng
Lee, Wei W.
Redaktion: Ho, Paul S.
Lee, Wei William
Leu, Jihperng
Herausgeber: Paul S Ho/Jihperng Leu/Wei William Lee
Hersteller: Springer-Verlag GmbH
Springer Berlin Heidelberg
Springer Series in Advanced Microelectronics
Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, D-69121 Heidelberg, juergen.hartmann@springer.com
Maße: 241 x 160 x 23 mm
Von/Mit: Paul S. Ho (u. a.)
Erscheinungsdatum: 14.11.2002
Gewicht: 0,664 kg
Artikel-ID: 103497095
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