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Helium Ion Microscopy
Principles and Applications
Taschenbuch von David C. Joy
Sprache: Englisch

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Beschreibung
Helium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions ¿ such as the Helium Ion Microscope (HIM) ¿ are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined.
Helium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions ¿ such as the Helium Ion Microscope (HIM) ¿ are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined.
Zusammenfassung

Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy

Compares ion and electron beams as options for microscopy

Presents a detailed physical model of ion-solid interactions and signal generation

Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy
Inhaltsverzeichnis

Chapter 1: Introduction to Helium Ion Microscopy.- Chapter 2: Microscopy with Ions - A brief history.- Chapter 3: Operating the Helium Ion Microscope.- Chapter 4: Ion -Solid Interactions and Image Formation.- Chapter 5: Charging and Damage.- Chapter 6: Microanalysis with the HIM.- Chapter 7: Ion Generated Damage.- Chapter 8: Working with other Ion beams.- Chapter 9: Patterning and Nanofabrication.- Conclusion.- Bibliography.- Appendix: iSE Yields, and IONiSE parameters for He+ excitation of Elements and Compounds.- Index.

Details
Erscheinungsjahr: 2013
Fachbereich: Fertigungstechnik
Genre: Importe, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: viii
64 S.
13 s/w Illustr.
16 farbige Illustr.
64 p. 29 illus.
16 illus. in color.
ISBN-13: 9781461486596
ISBN-10: 1461486599
Sprache: Englisch
Einband: Kartoniert / Broschiert
Autor: Joy, David C.
Hersteller: Springer US
Springer New York
Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, D-69121 Heidelberg, juergen.hartmann@springer.com
Maße: 235 x 155 x 5 mm
Von/Mit: David C. Joy
Erscheinungsdatum: 14.09.2013
Gewicht: 0,138 kg
Artikel-ID: 105718162
Zusammenfassung

Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy

Compares ion and electron beams as options for microscopy

Presents a detailed physical model of ion-solid interactions and signal generation

Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy
Inhaltsverzeichnis

Chapter 1: Introduction to Helium Ion Microscopy.- Chapter 2: Microscopy with Ions - A brief history.- Chapter 3: Operating the Helium Ion Microscope.- Chapter 4: Ion -Solid Interactions and Image Formation.- Chapter 5: Charging and Damage.- Chapter 6: Microanalysis with the HIM.- Chapter 7: Ion Generated Damage.- Chapter 8: Working with other Ion beams.- Chapter 9: Patterning and Nanofabrication.- Conclusion.- Bibliography.- Appendix: iSE Yields, and IONiSE parameters for He+ excitation of Elements and Compounds.- Index.

Details
Erscheinungsjahr: 2013
Fachbereich: Fertigungstechnik
Genre: Importe, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: viii
64 S.
13 s/w Illustr.
16 farbige Illustr.
64 p. 29 illus.
16 illus. in color.
ISBN-13: 9781461486596
ISBN-10: 1461486599
Sprache: Englisch
Einband: Kartoniert / Broschiert
Autor: Joy, David C.
Hersteller: Springer US
Springer New York
Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, D-69121 Heidelberg, juergen.hartmann@springer.com
Maße: 235 x 155 x 5 mm
Von/Mit: David C. Joy
Erscheinungsdatum: 14.09.2013
Gewicht: 0,138 kg
Artikel-ID: 105718162
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