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Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
Enables design of smaller, cheaper and more efficient power supplies.
Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
Enables design of smaller, cheaper and more efficient power supplies.
Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architectures
Demonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversion
Enables design of smaller and more efficient power supplies
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.
| Erscheinungsjahr: | 2019 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Taschenbuch |
| Seiten: | 248 |
| Reihe: | Integrated Circuits and Systems |
| Inhalt: |
xiii
232 S. 18 s/w Illustr. 165 farbige Illustr. 232 p. 183 illus. 165 illus. in color. |
| ISBN-13: | 9783030085940 |
| ISBN-10: | 3030085945 |
| Sprache: | Englisch |
| Ausstattung / Beilage: | Paperback |
| Einband: | Kartoniert / Broschiert |
| Redaktion: |
Meneghesso, Gaudenzio
Zanoni, Enrico Meneghini, Matteo |
| Herausgeber: | Gaudenzio Meneghesso/Matteo Meneghini/Enrico Zanoni |
| Auflage: | Softcover reprint of the original 1st ed. 2018 |
| Hersteller: |
Springer International Publishing
Springer International Publishing AG Integrated Circuits and Systems |
| Maße: | 235 x 155 x 14 mm |
| Von/Mit: | Gaudenzio Meneghesso (u. a.) |
| Erscheinungsdatum: | 30.01.2019 |
| Gewicht: | 0,382 kg |
Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architectures
Demonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversion
Enables design of smaller and more efficient power supplies
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.
| Erscheinungsjahr: | 2019 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Taschenbuch |
| Seiten: | 248 |
| Reihe: | Integrated Circuits and Systems |
| Inhalt: |
xiii
232 S. 18 s/w Illustr. 165 farbige Illustr. 232 p. 183 illus. 165 illus. in color. |
| ISBN-13: | 9783030085940 |
| ISBN-10: | 3030085945 |
| Sprache: | Englisch |
| Ausstattung / Beilage: | Paperback |
| Einband: | Kartoniert / Broschiert |
| Redaktion: |
Meneghesso, Gaudenzio
Zanoni, Enrico Meneghini, Matteo |
| Herausgeber: | Gaudenzio Meneghesso/Matteo Meneghini/Enrico Zanoni |
| Auflage: | Softcover reprint of the original 1st ed. 2018 |
| Hersteller: |
Springer International Publishing
Springer International Publishing AG Integrated Circuits and Systems |
| Maße: | 235 x 155 x 14 mm |
| Von/Mit: | Gaudenzio Meneghesso (u. a.) |
| Erscheinungsdatum: | 30.01.2019 |
| Gewicht: | 0,382 kg |
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