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Cover: 9780521819343 | Extended Defects in Semiconductors | D. B. Holt (u. a.) | Buch | 2016
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Extended Defects in Semiconductors
Buch von D. B. Holt (u. a.)
Sprache: Englisch

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Beschreibung
The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Über den Autor
David Holt is an Emeritus Professor in the Department of Materials at Imperial College, London. He obtained his doctorate in Physical Metallurgy from the University of Birmingham, UK, in 1956, after which he held a number of academic positions over five years in the physics department at the University of the Witwatersrand, South Africa, before moving to the Department of Metallurgy at Imperial College, London. He has remained at Imperial College since then, except for a sabbatical year in the School of Physics at the University of New South Wales, Australia, and shorter periods at the Indian Institute of Technology, Kanpur, India. He has been a regular visitor at the Maspec Institute (now part of IMEM) in Parma, Italy. He researched the science and technology of semiconducting materials and devices and developed and applied techniques for their characterization in the scanning electron microscope. He is author or co-author of approximately 150 scientific publications and has co-authored or edited five previous books.
Zusammenfassung
Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Inhaltsverzeichnis
1. Semiconducting materials; 2. An introduction to extended defects; 3. Characterization of extended defects in semiconductors; 4. Core structures and mechanical effects of extended defects specific to semiconductors; 5. The electrical, optical and device effects of dislocations and grain boundaries; 6. Point defect materials problems.
Details
Erscheinungsjahr: 2016
Fachbereich: Elektrizität/Magnetismus/Optik
Genre: Physik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Seiten: 644
ISBN-13: 9780521819343
ISBN-10: 0521819342
Sprache: Englisch
Ausstattung / Beilage: HC gerader Rücken kaschiert
Einband: Gebunden
Autor: Holt, D. B.
Yacobi, B. G.
Hersteller: Cambridge University Press
Maße: 250 x 175 x 39 mm
Von/Mit: D. B. Holt (u. a.)
Erscheinungsdatum: 30.03.2016
Gewicht: 1,275 kg
preigu-id: 101542157
Über den Autor
David Holt is an Emeritus Professor in the Department of Materials at Imperial College, London. He obtained his doctorate in Physical Metallurgy from the University of Birmingham, UK, in 1956, after which he held a number of academic positions over five years in the physics department at the University of the Witwatersrand, South Africa, before moving to the Department of Metallurgy at Imperial College, London. He has remained at Imperial College since then, except for a sabbatical year in the School of Physics at the University of New South Wales, Australia, and shorter periods at the Indian Institute of Technology, Kanpur, India. He has been a regular visitor at the Maspec Institute (now part of IMEM) in Parma, Italy. He researched the science and technology of semiconducting materials and devices and developed and applied techniques for their characterization in the scanning electron microscope. He is author or co-author of approximately 150 scientific publications and has co-authored or edited five previous books.
Zusammenfassung
Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Inhaltsverzeichnis
1. Semiconducting materials; 2. An introduction to extended defects; 3. Characterization of extended defects in semiconductors; 4. Core structures and mechanical effects of extended defects specific to semiconductors; 5. The electrical, optical and device effects of dislocations and grain boundaries; 6. Point defect materials problems.
Details
Erscheinungsjahr: 2016
Fachbereich: Elektrizität/Magnetismus/Optik
Genre: Physik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Seiten: 644
ISBN-13: 9780521819343
ISBN-10: 0521819342
Sprache: Englisch
Ausstattung / Beilage: HC gerader Rücken kaschiert
Einband: Gebunden
Autor: Holt, D. B.
Yacobi, B. G.
Hersteller: Cambridge University Press
Maße: 250 x 175 x 39 mm
Von/Mit: D. B. Holt (u. a.)
Erscheinungsdatum: 30.03.2016
Gewicht: 1,275 kg
preigu-id: 101542157
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