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Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.
This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.
This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
2. Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications
3. Advanced modeling and characterization techniques for innovative memory devices: The RRAM case
4. Mechanism of memristive switching in OxRAM
5. Interface effects on memristive devices
6. Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)
7. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology
8. 3D-NAND Flash memory and technology
9. Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems
10. Selector devices for x-point memory Part 2: Emerging opportunities
11. Ferroelectric memories
12. Advances in nanowire PCM13. Flexible and transparent ReRAM devices for system on panel (SOP) application
14. RRAM/memristor for computing
15. Emerging memory technologies for neuromorphic hardware
16. Neuromorphic computing with resistive switching memory devices
| Erscheinungsjahr: | 2019 |
|---|---|
| Fachbereich: | Elektrizität/Magnetismus/Optik |
| Genre: | Importe, Physik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Taschenbuch |
| Inhalt: | Einband - flex.(Paperback) |
| ISBN-13: | 9780081025840 |
| ISBN-10: | 008102584X |
| Sprache: | Englisch |
| Einband: | Kartoniert / Broschiert |
| Redaktion: |
Nishi, Yoshio
Magyari-Kope, Blanka |
| Auflage: | 2. Auflage |
| Hersteller: | Elsevier Inc |
| Verantwortliche Person für die EU: | Libri GmbH, Europaallee 1, D-36244 Bad Hersfeld, gpsr@libri.de |
| Maße: | 229 x 152 x 34 mm |
| Von/Mit: | Yoshio Nishi (u. a.) |
| Erscheinungsdatum: | 28.06.2019 |
| Gewicht: | 0,876 kg |